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chr3894 - 98f rohs compliant ref. : dschr38941192 - 11 jul 11 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 37 - 40ghz integrated down converter gaas monolithic microwave ic description the chr3894 - 98f is a multifunction monolithic receiver , which integrate s a balanced cold fet mixer, a lo chain with buffers associated to a time two multiplier , and a rf low noise amplifier including gain control . it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured wi th a phemt process, 0. 1 5m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form . main features main characteristics tamb. = + 25c symbol parameter min typ max unit f rf rf f requency range 37 40 ghz f ol l o frequency range 17.5 21.0 ghz f if if frequency range dc 3.5 ghz g conversion gain without attenuation 13 db if_q if_i lo in vgx vd1 vd vgl gc rf in x2 if_q if_i lo in vgx vd1 vd vgl gc rf in x2 conversion gain (usb mode) @ if 2ghz 0 2 4 6 8 10 12 14 16 18 20 35 36 37 38 39 40 41 42 43 44 rf frequency (ghz) conversion gain (db) -2v -0.4v -0.2v 0v +0.6v
chr3894 - 98f 37 - 40ghz integrated down converter ref. : dschr38941192 - 11 jul 11 2 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 main characteristics tamb. = + 25c , v d = v d 1 = +4 v (1) symbol parameter min typ max unit f rf rf frequency range 37 40 ghz f ol lo frequency range 17.5 21.0 ghz f if if frequency range dc 3.5 ghz g conversion gain without attenuation (2) 13 db ? g gain control range 8 db nf noise figure without attenuation , for if>0.1ghz 4. 5 db im_rej image rejection ( 2 ) 16 dbc p lo lo input power 0 dbm iip3 input ip3 without attenuation 2 dbm iip3 input ip3 @ all attenuation 0 dbm lo rl input lo return loss - 12 db rf rl input rf return loss - 8 db lo/rf iso isolation lo on rf @ lo - 40 dbm 2lo/rf iso isolation lo on rf @ 2 l o - 30 dbm v gl lna dc gate voltage - 0.15 v gc gain control dc voltage - 2 0.6 v v gx multiplier dc gate voltage - 0.9 v i d t total drain current (i d +i d 1) ( 3 ) 250 ma these values are representative of on - wafer measurements that are made without bonding wires at the rf ports. a bonding wire of typically 0.1 to 0. 2 5nh will improve the matching at the accesses. (1) v d : lo - chain drain bias voltage. v d 1: lna drain bias voltage. ( 2 ) an external combiner 90 is required on i / q. ( 3 ) i d : lo - chain drain current around 125ma. i d 1: lna drain current around 125ma, could be tuned with v gl . note: i d t is not affected by gc. electrostatic discharge sensitive device observe handling precautions!
37 - 40ghz integrated down converter chr3894 - 98f ref. : dschr38941192 - 11 jul 11 3 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit v d , v d 1 drain bias voltage 4. 5v v i d t drain bias current 3 4 0 ma v gl , v gx gate bias voltage - 2 to +0.4 v gc gain control voltage - 2.5 to + 0.8 v p_rf maximum peak input power overdrive (2) + 1 5 dbm p_lo maximum lo input power +1 5 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. typical bias conditions tamb.= + 25c symbol parameter values unit v d , v d 1 dc drain voltages 4 v i d 1 lna drain current controlled with v gl 125 ma v gl lna dc gate voltage - 0.15 v v gx multiplier d c gate voltage - 0.9 v gc gain control dc voltage - 2 to 0.6 v
chr3894 - 98f 37 - 40ghz integrated down converter ref. : dschr38941192 - 11 jul 11 4 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances tamb.= +25c, v d = v d 1 =+4v, v gl = - 0.15v, v gx = - 0.9v, p_lo = 0dbm (i d t = 250ma) these values are representative of de - embedded onb oard measurements as defined on the paragraph evaluation mother board. conversion gain versus rf & if frequency (usb & lsb modes) w ithout attenuation: gc= - 2v conversion gain versus rf frequency and gain control voltage (if 2ghz, usb mode) 0 2 4 6 8 10 12 14 16 18 20 35 36 37 38 39 40 41 42 43 44 rf frequency (ghz) conversion gain (db) usb- 2ghz lsb- 2ghz usb- 3.5ghz lsb- 3.5ghz 0 2 4 6 8 10 12 14 16 18 20 35 36 37 38 39 40 41 42 43 44 rf frequency (ghz) conversion gain (db) -2v -0.4v -0.2v 0v +0.6v
37 - 40ghz integrated down converter chr3894 - 98f ref. : dschr38941192 - 11 jul 11 5 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances tamb.= +25c, v d = v d 1 =+4v, v gl = - 0.15v, v gx = - 0.9v, p_lo = 0dbm (i d t = 250ma) noise figure versus rf frequency at if 2ghz (usb & lsb modes) w ithout attenuation: gc= - 2v noise figure versus rf frequency and gain control voltage (if 2ghz, usb mode) 0 1 2 3 4 5 6 7 8 9 10 35 36 37 38 39 40 41 42 43 rf frequency (ghz) noise figure (db) usb mode lsb mode 0 1 2 3 4 5 6 7 8 9 10 35 36 37 38 39 40 41 42 43 rf frequency (ghz) noise figure (db) -2v -0.4v -0.2v 0v +0.6v
chr3894 - 98f 37 - 40ghz integrated down converter ref. : dschr38941192 - 11 jul 11 6 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances tamb.= +25c, v d = v d 1 =+4v, v gl = - 0.15v, v gx = - 0.9v, p_lo = 0dbm (i d t = 250ma) image rejection versus rf & if frequency (usb & lsb modes) w ithout attenuation: gc= - 2v return losses (rf & lo) versus frequency and gain control voltage 0 4 8 12 16 20 24 28 32 36 40 35 36 37 38 39 40 41 42 43 44 rf frequency (ghz) image rejection (dbc) usb- 2ghz lsb- 2ghz usb- 3.5ghz lsb- 3.5ghz - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 0 5 10 15 20 25 30 35 40 45 rf & lo return losses (db) frequency (ghz) rf @ gc= - 2v rf @ gc= +0.6v lo
37 - 40ghz integrated down converter chr3894 - 98f ref. : dschr38941192 - 11 jul 11 7 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances tamb.= +25c, v d = v d 1 =+4v, v gl = - 0.15v, v gx = - 0.9v, p_lo = 0dbm (i d t = 250ma) input ip3 vs rf frequency at if 3.5ghz w ithout attenuation: gc= - 2v imd3 vs rf frequency at if 3.5ghz w ithout attenuation: gc= - 2v input ip3 vs gain control voltage at 38ghz (if 2ghz) imd3 vs gain control voltage at 38ghz (if 2ghz) isolation lo on rf @ lo and 2 lo - 6 - 4 - 2 0 2 4 6 8 10 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 iip3 (dbm) input power dcl (dbm) 37.5ghz 38.5ghz 39.5ghz 40.5ghz 0 10 20 30 40 50 60 70 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 imd3 (dbc) input power dcl (dbm) 37.5ghz 38.5ghz 39.5ghz 40.5ghz - 6 - 4 - 2 0 2 4 6 8 10 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 iip3 (dbm) input power dcl (dbm) - 2v - 0.5v - 0.4v 0v 0.6v 0 10 20 30 40 50 60 70 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 imd3 (dbc) input power dcl (dbm) - 2v - 0.5v - 0.4v 0v 0.6v
chr3894 - 98f 37 - 40ghz integrated down converter ref. : dschr38941192 - 11 jul 11 8 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances versus temperature tamb = +25c, tcold = - 40c, thot = +85c v d = v d 1 =+4v, v gl = - 0.15v, v gx = - 0.9v, p_lo = 0dbm conversion gain versus temperature if 2ghz, usb mode w ithout attenuation: gc= - 2v noise figure versus temperature if 2ghz, usb mode w ithout attenuation: gc= - 2v input ip3 vs temperature at 38 .5 ghz (if 3.5 ghz) w ithout attenuation: gc= - 2v imd3 vs temperature at 38.5ghz (if 3.5ghz) w ithout attenuation: gc= - 2v 0 2 4 6 8 10 12 14 16 18 20 35 36 37 38 39 40 41 42 43 44 conversion gain (db) rf frequency (ghz) - 40 c 25 c 85 c 0 1 2 3 4 5 6 7 8 9 10 35 36 37 38 39 40 41 42 43 noise figure (db) rf frequency (ghz) - 40 c 25 c 85 c - 6 - 4 - 2 0 2 4 6 8 10 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 iip3 (dbm) input power dcl (dbm) - 40 c 25 c 85 c 0 10 20 30 40 50 60 70 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 imd3 (dbc) input power dcl (dbm) - 40 c 25 c 85 c
37 - 40ghz integrated down converter chr3894 - 98f ref. : dschr38941192 - 11 jul 11 9 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 mechanical data chip thickness: 100m. chip size : 2680 x2610 m 35m all dimensions are in micrometers it is strongly recommended to add capacitor typically 120pf on ea ch dc access (v gx , v d , v d 1, v gl and gc). v d & v d 1 could be connected together on the same capacitor. v d 1 is the lna drain access. lo_in if_i if_q vgx vd vd1 vgl gc rf_in
chr3894 - 98f 37 - 40ghz integrated down converter ref. : dschr38941192 - 11 jul 11 10 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 evaluation mother board based on typically ro4003 / 8mils or equivalent. decoupling capacitors of 120nf and 10nf 10% are recommended for all dc accesses. hybrid coupler 90: 2 - 4ghz . the board losses are estimated from 2 to 3db in the frequency range. if_q if_i lo_in rf_in
37 - 40ghz integrated down converter chr3894 - 98f ref. : dschr38941192 - 11 jul 11 11 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 dc schematic lna: 4v, 125 ma lo chain : 4v, 1 25 ma 27 ? vgl# - 0.2v 2k ? 53ma 34 ? 43ma vd1 10ma 150 ? 576 ? 1.9k ? 15 ? 1k ? 5k ? rf x4 15ma 90 ? 444 ? 1.6k ? 15 ? 2k ? 1k ? x4 gc 1k ? 2k ? 200 ? 185 ? 30 ? 16 ? vd 45ma 25ma @pin=0dbm 50ma lo vgx= - 0.9v 26 ? 18 ? 800 ? 70 ? mixer gate 700 ? 515 ? 515 ? x2
chr3894 - 98f 37 - 40ghz integrated down converter ref. : dschr38941192 - 11 jul 11 12 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes due to esd protection circuits on rf input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the rf accesses. esd protections are also implemented on gate and control accesses (vgx , vgl and gc) . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. ordering information chip form : chr3894 - 98f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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